IXFR66N50Q2
MOSFET N-CH 500V 50A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFR66N50Q2 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current capability of 50A at 25°C (Tc) and a drain-source voltage (Vdss) of 500V. With a maximum power dissipation of 500W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance (Rds On) of 85mOhm at 33A and 10V gate drive, minimizing conduction losses. Key parameters include a gate charge (Qg) of 200 nC at 10V and input capacitance (Ciss) of 9125 pF at 25V. The IXFR66N50Q2 is housed in an ISOPLUS247™ package, a through-hole mount configuration. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±30V. This MOSFET is utilized in power conversion, industrial motor control, and high-voltage power supplies.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9125 pF @ 25 V |
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