IXFR64N60Q3
MOSFET N-CH 600V 42A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR64N60Q3 is a HiPerFET™, Q3 Class N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 42A at 25°C (Tc), with a maximum power dissipation of 568W (Tc). The on-resistance (Rds On) is specified at 104mOhm maximum at 32A and 10V gate-source voltage. With a gate charge (Qg) of 190 nC at 10V and input capacitance (Ciss) of 9930 pF at 25V, it is suitable for demanding power conversion circuits. The component utilizes MOSFET technology and is housed in an ISOPLUS247™ package, a through-hole mounting type. Operating temperature ranges from -55°C to 150°C (TJ), with a maximum gate-source voltage of ±30V. This MOSFET is commonly employed in industries such as industrial power supplies and motor control.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 568W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9930 pF @ 25 V |
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