IXFR64N50Q3
MOSFET N-CH 500V 45A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR64N50Q3 is an N-Channel Power MOSFET from the HiPerFET™, Q3 Class series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 45A at 25°C (Tc). With a maximum power dissipation of 500W (Tc), it is designed for high-efficiency switching applications. The Rds On is specified at 95mOhm maximum for 32A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 145 nC maximum and Input Capacitance (Ciss) of 6950 pF maximum. The device utilizes ISOPLUS247™ packaging for through-hole mounting. This MOSFET is suitable for demanding applications across industrial power supplies, motor control, and renewable energy systems. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6950 pF @ 25 V |
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