IXFR55N50
MOSFET N-CH 500V 48A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFR55N50 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 48A at 25°C, with a maximum power dissipation of 400W (Tc). The Rds(on) is specified at a maximum of 90mOhm at 27.5A and 10V gate drive. Key characteristics include a gate charge (Qg) of 330 nC at 10V and input capacitance (Ciss) of 9400 pF at 25V. The IXFR55N50 utilizes through-hole mounting in an ISOPLUS247™ package, facilitating robust thermal management. This device is suitable for applications in industrial power supplies, motor control, and renewable energy systems. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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