IXFR44N50Q3
MOSFET N-CH 500V 25A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR44N50Q3 is an N-Channel Power MOSFET from the HiPerFET™, Q3 Class series, designed for high-efficiency power switching applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 25A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The device offers a low on-resistance (Rds On) of 154mOhm at 22A and 10V gate-source voltage, facilitated by a 10V drive voltage. Key parameters include a gate charge (Qg) of 93 nC maximum at 10V and input capacitance (Ciss) of 4800 pF maximum at 25V. The IXFR44N50Q3 utilizes MOSFET technology and is housed in an ISOPLUS247™ package for through-hole mounting, operating from -55°C to 150°C. This device is commonly found in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 154mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
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