IXFR40N50Q2
MOSFET N-CH 500V 29A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFR40N50Q2 is a 500V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current of 29A (Tc) and a low on-resistance of 170mOhm at 20A and 10V. The ISOPLUS247™ package offers excellent thermal performance with a maximum power dissipation of 320W (Tc). Key parameters include a gate charge of 110 nC at 10V and input capacitance of 4200 pF at 25V. With a maximum junction temperature of 150°C, this MOSFET is suitable for use in power supplies, motor drives, and solar inverters. The IXFR40N50Q2 is provided in a through-hole mounting configuration.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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