IXFR36N50P
MOSFET N-CH 500V 19A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR36N50P is an N-Channel Power MOSFET from the HiPerFET™, Polar series. This device features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 19 A at 25°C (Tc). The Rds On is specified at a maximum of 190 mOhm at 18 A and 10 V gate drive. Key capacitance parameters include Input Capacitance (Ciss) of 5500 pF at 25 V and Gate Charge (Qg) of 93 nC at 10 V. With a maximum power dissipation of 156 W (Tc), this MOSFET is housed in an ISOPLUS247™ package suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This component finds application in high-power switching applications across various industrial sectors.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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