IXFR32N80Q3
MOSFET N-CH 800V 24A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR32N80Q3 is an N-Channel Power MOSFET from the HiPerFET™, Q3 Class series. This component features a high drain-source voltage rating of 800V and a continuous drain current capability of 24A at 25°C (Tc), with a maximum power dissipation of 500W (Tc). The ON-resistance (Rds On) is specified at a maximum of 300mOhm at 16A and 10V gate-source voltage. Key characteristics include input capacitance (Ciss) of 6940pF (max) at 25V and gate charge (Qg) of 140nC (max) at 10V. The device operates over a temperature range of -55°C to 150°C (TJ). It is housed in an ISOPLUS247™ package with through-hole mounting. This MOSFET is suitable for applications in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6940 pF @ 25 V |
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