IXFR32N50Q
MOSFET N-CH 500V 30A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFR32N50Q, offers a 500V drain-source voltage (Vdss) and a continuous drain current of 30A at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 160mOhm at 16A and 10V Vgs. With a power dissipation capability of 310W (Tc), it is designed for demanding applications. The IXFR32N50Q utilizes MOSFET technology and is housed in an ISOPLUS247™ package, suitable for through-hole mounting. Key electrical parameters include a gate charge (Qg) of 150nC at 10V and input capacitance (Ciss) of 3950pF at 25V. Operating temperature range is from -55°C to 150°C (TJ). This component finds utility in power supply design, motor control, and industrial power applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 25 V |
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