IXFR32N100Q3
MOSFET N-CH 1000V 23A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR32N100Q3 is an N-Channel Power MOSFET from the HiPerFET™, Q3 Class series. This component features a drain-to-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 23 A at 25°C (Tc). With a maximum power dissipation of 570 W (Tc), it is designed for high-power applications. The Rds On is specified at 350 mOhm maximum at 16 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 195 nC maximum at 10 V and input capacitance (Ciss) of 9940 pF maximum at 25 V. This through-hole device utilizes the ISOPLUS247™ package, offering robust thermal performance. It operates across a wide temperature range of -55°C to 150°C (TJ). This component finds application in various demanding industries, including power supplies, industrial motor control, and electric vehicle charging.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 570W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9940 pF @ 25 V |
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