IXFR30N50Q
MOSFET N-CH 500V 30A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR30N50Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 310W (Tc). The ON-resistance (Rds On) is specified at a maximum of 160mOhm at 15A and 10V gate-source voltage (Vgs). Key parameters include 150 nC (typical) gate charge (Qg) at 10V Vgs and 3950 pF (typical) input capacitance (Ciss) at 25V Vds. The device operates within a temperature range of -55°C to 150°C (TJ) and is packaged in an ISOPLUS247™ through-hole package. This MOSFET is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 25 V |
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