IXFR30N110P
MOSFET N-CH 1100V 16A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR30N110P is an N-Channel Power MOSFET from the HiPerFET™, Polar series. This through-hole component features a drain-source voltage (Vdss) of 1100V and a continuous drain current (Id) of 16A at 25°C (Tc). With a maximum power dissipation of 320W (Tc), it offers a low on-resistance (Rds On) of 400mOhm at 15A and 10V. The device has a gate charge (Qg) of 235 nC at 10V and input capacitance (Ciss) of 13600 pF at 25V. Packaged in an ISOPLUS247™ (TO-247-3), this MOSFET operates from -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) range of ±30V. It is suitable for applications in high-voltage power conversion, industrial automation, and renewable energy systems.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 25 V |
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