IXFR26N60Q
MOSFET N-CH 600V 23A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR26N60Q is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 23A at 25°C (Tc), with a maximum power dissipation of 310W (Tc). The device offers a low on-resistance (Rds On) of 250mOhm at 13A and 10V gate-source voltage. Its gate charge (Qg) is specified at 200 nC maximum at 10V, and input capacitance (Ciss) is 5100 pF maximum at 25V. The IXFR26N60Q utilizes MOSFET technology and is housed in an ISOPLUS247™ package for through-hole mounting. This component is suitable for use in power supply, motor control, and industrial applications. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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