IXFR26N50Q
MOSFET N-CH 500V 24A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFR26N50Q is an N-Channel Power MOSFET rated for 500V drain-source voltage. It offers a continuous drain current of 24A at 25°C (Tc) and a maximum power dissipation of 250W (Tc). Key parameters include a low on-resistance of 200mOhm maximum at 13A and 10V gate drive, and a gate charge (Qg) of 95 nC maximum at 10V. Input capacitance (Ciss) is 3900 pF maximum at 25V. This device features a through-hole mounting type within the ISOPLUS247™ package, suitable for demanding applications. The IXYS HiPerFET™ series is utilized in industries such as industrial power supplies, motor control, and lighting.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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