IXFR26N50
MOSFET N-CH 500V 26A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR26N50 is an N-Channel HiPerFET™ MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 26 A at 25°C (Tc), with a maximum power dissipation of 250 W (Tc). The Rds On is specified at a maximum of 200 mOhm at 13 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 160 nC at 10 V and input capacitance (Ciss) of 4200 pF at 25 V. The IXFR26N50 utilizes through-hole mounting within an ISOPLUS247™ package, designed for efficient thermal management. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for applications in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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