IXFR24N50Q
MOSFET N-CH 500V 22A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFR24N50Q is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 22A at 25°C (Tc). The low on-resistance (Rds On) of 230mOhm at 12A and 10V gate drive, coupled with a maximum power dissipation of 250W (Tc), makes it suitable for demanding power supply designs. Key parameters include a gate charge (Qg) of 95 nC and input capacitance (Ciss) of 3900 pF at 25V. The device is housed in an ISOPLUS247™ package, facilitating through-hole mounting. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is utilized in industries such as industrial power supplies and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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