IXFR180N10
MOSFET N-CH 100V 165A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFR180N10, offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 165A at 25°C. This device features a low on-resistance (Rds On) of 8mOhm at 90A and 10V Vgs, with a maximum gate charge (Qg) of 400 nC at 10V. The IXFR180N10 boasts high power dissipation capability, rated at 400W (Tc), and utilizes advanced MOSFET technology. Its ISOPLUS247™ package with through-hole mounting ensures robust thermal management. Key parameters include input capacitance (Ciss) of 9400 pF at 25V and a gate threshold voltage (Vgs(th)) of 4V at 8mA. This component is suitable for demanding applications in power conversion, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 165A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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