IXFR180N06
MOSFET N-CH 60V 180A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR180N06 is a HiPerFET™ N-Channel power MOSFET designed for high-efficiency power switching applications. Featuring a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 180A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 5mOhm at 90A and 10V. It supports a gate drive voltage of 10V for optimal performance. Key parameters include a gate charge (Qg) of 420 nC at 10V and an input capacitance (Ciss) of 7650 pF at 25V. With a maximum power dissipation of 560W (Tc) and an operating temperature range of -55°C to 150°C (TJ), the IXFR180N06 is suitable for demanding environments. The component is housed in an ISOPLUS247™ package for through-hole mounting, facilitating integration into power control circuits across various industrial sectors.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 420 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7650 pF @ 25 V |
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