IXFR15N80Q
MOSFET N-CH 800V 13A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFR15N80Q is an N-Channel Power MOSFET from the HiPerFET™, Q Class series, designed for high-voltage applications. This device features a drain-source breakdown voltage (Vdss) of 800V and a continuous drain current (Id) of 13A at 25°C (Tc). With a maximum power dissipation of 250W (Tc), it is suitable for demanding power conversion circuits. The on-resistance (Rds On) is a maximum of 600mOhm at 7.5A and 10V, with a typical gate charge (Qg) of 90 nC at 10V. Input capacitance (Ciss) is 4300 pF at 25V. The IXFR15N80Q utilizes the ISOPLUS247™ package for through-hole mounting, offering robust thermal performance. This component is commonly found in industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 25 V |