IXFR15N100Q3
MOSFET N-CH 1000V 10A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFR15N100Q3 is an N-Channel Power MOSFET from the HiPerFET™, Q3 Class series. This component offers a 1000 V breakdown voltage (Vdss) and a continuous drain current of 10A at 25°C (Tc). With a maximum Rds(on) of 1.2 Ohms at 7.5A and 10V, it delivers efficient switching performance. The device features a low gate charge (Qg) of 64 nC at 10V and an input capacitance (Ciss) of 3250 pF at 25V. Designed for high power applications, it can dissipate up to 400W (Tc). The IXFR15N100Q3 is housed in an ISOPLUS247™ package for through-hole mounting. This MOSFET is suitable for demanding applications in power supplies, industrial motor control, and power factor correction circuits. Its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFX64N50Q3
MOSFET N-CH 500V 64A PLUS247-3
IXFN80N50Q3
MOSFET N-CH 500V 63A SOT227B
IXFX32N100Q3
MOSFET N-CH 1000V 32A PLUS247-3
