IXFR150N15
MOSFET N-CH 150V 105A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR150N15 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 105A at 25°C. With a low on-resistance (Rds(on)) of 12.5mOhm at 75A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 400W at 25°C (Tc), ensuring robust performance under demanding thermal conditions. Key parameters include a gate charge (Qg) of 360nC at 10V and input capacitance (Ciss) of 9100pF at 25V. The IXFR150N15 utilizes the ISOPLUS247™ through-hole package, facilitating efficient heat dissipation. This MOSFET is suitable for use in power supplies, motor drives, and industrial applications requiring high current handling and low switching losses.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
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