IXFR12N100
MOSFET N-CH 1000V 10A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR12N100 is a high-performance N-Channel Power MOSFET from the HiPerFET™ series, designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) rating of 10A at 25°C (Tc). With a low on-resistance (Rds On) of 1.1 Ohm at 6A and 10V, it minimizes conduction losses. Key parameters include a gate charge (Qg) of 90 nC at 10 V and an input capacitance (Ciss) of 2900 pF at 25 V. The IXFR12N100 is packaged in the ISOPLUS247™ (TO-247-3) through-hole package, facilitating robust thermal management. This device is suitable for applications in power conversion, industrial motor control, and high-voltage switching power supplies.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | ISOPLUS247™ |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |