IXFR120N20
MOSFET N-CH 200V 105A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR120N20 is an N-Channel Power MOSFET from the HiPerFET™ series, designed for high-efficiency power conversion applications. This component features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 105A at 25°C (Tc). With a low on-resistance (Rds On) of 17mOhm at 60A and 10V, it minimizes conduction losses. The device boasts a high power dissipation capability of 417W (Tc) and utilizes the ISOPLUS247™ through-hole package for robust thermal management. Key parameters include a gate charge (Qg) of 360 nC at 10V and input capacitance (Ciss) of 9100 pF at 25V. This MOSFET is suitable for use in industries such as industrial power supplies, motor control, and power grid systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
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