IXFR100N25
MOSFET N-CH 250V 87A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFR100N25 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power conversion. This through-hole component features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 87A at 25°C (Tc). With a maximum power dissipation of 400W (Tc) and a low on-resistance of 27mOhm at 50A and 10V, it delivers exceptional performance in demanding applications. The device boasts a gate charge (Qg) of 300 nC at 10V and an input capacitance (Ciss) of 9100 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), its ISOPLUS247™ package ensures robust thermal management. This MOSFET is suitable for applications in industrial power supplies, motor drives, and electric vehicle charging systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
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