IXFQ60N60X
MOSFET N-CH 600V 60A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFQ60N60X is a 600V N-Channel MOSFET from the HiPerFET™, Ultra X series. This component offers a continuous drain current of 60A (Tc) at 25°C and a maximum power dissipation of 890W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a low on-resistance (Rds On) of 55mOhm at 30A and 10V, and a gate charge (Qg) of 143nC at 10V. It features a high input capacitance (Ciss) of 5800pF at 25V and a gate-source breakdown voltage (Vgs(max)) of ±30V. The device is packaged in a TO-3P through-hole configuration, suitable for applications requiring robust thermal management. This MOSFET is utilized in power supply, motor drive, and industrial automation sectors.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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