IXFQ60N25X3
MOSFET N-CHANNEL 250V 60A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXFQ60N25X3 is an N-Channel HiPerFET™, Ultra X3 series MOSFET designed for high-power switching applications. This component features a 250 V drain-source voltage (Vdss) and a continuous drain current (Id) of 60 A at 25°C (Tc). With a maximum power dissipation of 320 W (Tc), it offers a low on-resistance (Rds On) of 23 mOhm at 30 A and 10 V. Key parameters include a gate charge (Qg) of 50 nC at 10 V and input capacitance (Ciss) of 3610 pF at 25 V. The IXFQ60N25X3 utilizes a through-hole mounting type within a TO-3P package. This device is suitable for applications in power supplies, motor control, and industrial automation. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Ultra X3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 320W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3610 pF @ 25 V |
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