IXFQ50N60X
MOSFET N-CH 600V 50A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFQ50N60X is an N-Channel HiPerFET™, Ultra X series power MOSFET designed for high-efficiency power conversion applications. This component features a 600V drain-source voltage (Vdss) and can handle a continuous drain current of 50A (Tc) at 25°C, with a maximum power dissipation of 660W (Tc). The Rds On is specified at a maximum of 73mOhm at 25A and 10V gate drive. Key parameters include a gate charge (Qg) of 116 nC @ 10V and input capacitance (Ciss) of 4660 pF @ 25V. The device is housed in a TO-3P package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly employed in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 73mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 660W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4660 pF @ 25 V |
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