IXFQ50N50P3
MOSFET N-CH 500V 50A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFQ50N50P3 is a high-performance N-Channel Power MOSFET from the HiPerFET™, Polar3™ series. This component features a maximum drain-source voltage of 500 V and a continuous drain current of 50 A at 25°C, with a maximum power dissipation of 960 W. The device is designed for through-hole mounting in a TO-3P package. Key parameters include a low on-resistance of 120 mOhm at 25 A and 10 V, and a gate charge of 85 nC at 10 V. The input capacitance (Ciss) is 4335 pF at 25 V. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for demanding applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4335 pF @ 25 V |
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