IXFQ34N50P3
MOSFET N-CH 500V 34A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, Polar3™ N-Channel Power MOSFET, part number IXFQ34N50P3. This device features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 34 A at 25°C (Tc). The IXFQ34N50P3 offers a low on-resistance (Rds On) of 170 mOhm maximum at 17 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 60 nC maximum at 10 V and an input capacitance (Ciss) of 3260 pF maximum at 25 V. With a maximum power dissipation of 695 W (Tc), this MOSFET is housed in a TO-3P-3 (SC-65-3) package suitable for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in various high-power applications including power supplies, motor drives, and industrial automation.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 695W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3260 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFQ20N50P3
MOSFET N-CH 500V 20A TO3P
IXFP16N50P3
MOSFET N-CH 500V 16A TO220AB
IXFQ28N60P3
MOSFET N-CH 600V 28A TO3P
