IXFQ30N60X
MOSFET N-CH 600V 30A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Ultra X series N-Channel Power MOSFET, part number IXFQ30N60X. This through-hole component offers a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C. Featuring a low on-resistance (Rds On) of 155mOhm at 15A and 10V Vgs, it supports high power applications with a maximum power dissipation of 500W (Tc). The device has a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 2270 pF at 25V. The TO-3P package is suitable for demanding applications across industrial and power supply sectors. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2270 pF @ 25 V |
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