IXFQ28N60P3
MOSFET N-CH 600V 28A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Polar3™ N-Channel Power MOSFET, part number IXFQ28N60P3, offers a 600V drain-source voltage and a continuous drain current of 28A at 25°C (Tc). This device features a low Rds(on) of 260mOhm maximum at 14A and 10V gate drive. With a maximum power dissipation of 695W (Tc) and a gate charge of 50 nC at 10V, it is suitable for demanding applications. The IXFQ28N60P3 utilizes MOSFET technology and is housed in a TO-3P through-hole package. Its operating temperature range is -55°C to 150°C (TJ). This component is commonly found in power supply, industrial motor drive, and lighting applications.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 695W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3560 pF @ 25 V |
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