IXFQ24N60X
MOSFET N-CH 600V 24A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFQ24N60X is a HiPerFET™, Ultra X series N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 24A at 25°C (Tc). With a maximum power dissipation of 400W (Tc), it is suitable for demanding power conversion tasks. The IXFQ24N60X exhibits a low on-resistance of 175mOhm (max) at 12A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 47nC at 10V and input capacitance (Ciss) of 1910pF at 25V. This MOSFET is commonly utilized in power supplies, industrial motor control, and high-voltage applications. It is supplied in a TO-3P package.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1910 pF @ 25 V |
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