IXFQ24N50P2
MOSFET N-CH 500V 24A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFQ24N50P2 is a HiPerFET™, PolarP2™ series N-Channel power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 24 A at 25°C (Tc). With a maximum power dissipation of 480 W (Tc) and a low on-resistance (Rds On) of 270 mOhm at 500 mA and 10 V, it offers efficient power handling. The device utilizes through-hole mounting in a TO-3P package. Key electrical characteristics include a gate charge (Qg) of 48 nC at 10 V and an input capacitance (Ciss) of 2890 pF at 25 V. The IXFQ24N50P2 is suitable for power supply, industrial motor control, and lighting applications.
Additional Information
Series: HiPerFET™, PolarP2™RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFH42N50P2
MOSFET N-CH 500V 42A TO247AD
IXFX94N50P2
MOSFET N-CH 500V 94A PLUS247-3
IXFV36N50P
MOSFET N-CH 500V 36A PLUS220
