IXFQ22N60P3
MOSFET N-CH 600V 22A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFQ22N60P3 is a HiPerFET™, Polar3™ series N-Channel Power MOSFET designed for high-voltage applications. This component offers a 600V breakdown voltage and a continuous drain current (Id) of 22A at 25°C (Tc). With a maximum power dissipation (Pd) of 500W (Tc), it is suitable for demanding power conversion circuits. The Rds On (Max) is specified at 360mOhm at 11A and 10V gate drive. Key parameters include a gate charge (Qg) of 38 nC at 10V and an input capacitance (Ciss) of 2600 pF at 25V. The device features a TO-3P package for through-hole mounting, operating across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.5mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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