IXFQ20N50P3
MOSFET N-CH 500V 20A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFQ20N50P3 is an N-Channel Power MOSFET from the HiPerFET™, Polar3™ series. This component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc). With a maximum on-resistance (Rds On) of 300mOhm at 10A and 10V, it offers efficient power handling, rated for 380W (Tc) dissipation. The device utilizes a TO-3P through-hole package, suitable for demanding applications. Key parameters include a gate charge (Qg) of 36 nC at 10V and input capacitance (Ciss) of 1800 pF at 25V. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power supply units, industrial motor control, and high-voltage switching applications.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.5mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFQ34N50P3
MOSFET N-CH 500V 34A TO3P
IXFP16N50P3
MOSFET N-CH 500V 16A TO220AB
IXFQ28N60P3
MOSFET N-CH 600V 28A TO3P
