IXFQ14N80P
MOSFET N-CH 800V 14A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFQ14N80P is an N-Channel HiPerFET™ Polar MOSFET designed for high-voltage applications. This component offers a Drain-Source voltage (Vdss) of 800 V and a continuous drain current (Id) capability of 14 A at 25°C (Tc). With a maximum power dissipation of 400 W (Tc) and an Rds On rating of 720 mOhm at 500 mA and 10 V, it is suitable for demanding power switching applications. Key parameters include an input capacitance (Ciss) of 3900 pF at 25 V and a gate charge (Qg) of 61 nC at 10 V. The device features a TO-3P package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in power supply designs, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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