IXFQ12N80P
MOSFET N-CH 800V 12A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFQ12N80P is an N-Channel HiPerFET™, Polar series power MOSFET designed for high voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 12A at 25°C. With a maximum power dissipation of 360W (Tc) and a typical Rds On of 850mOhm at 500mA and 10V, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 51 nC at 10V and an input capacitance (Ciss) of 2800 pF at 25V. The operating temperature range is -55°C to 150°C. This device is suitable for use in power factor correction, switch-mode power supplies, and industrial motor control applications. The package is TO-3P-3, SC-65-3.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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