IXFQ10N80P
MOSFET N-CH 800V 10A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFQ10N80P is an N-Channel MOSFET from the HiPerFET™, Polar series, packaged in a TO-3P through-hole configuration. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 10A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The Rds On is specified at a maximum of 1.1 Ohm at 5A and 10V gate drive. Key parameters include a gate charge (Qg) of 40 nC @ 10V and input capacitance (Ciss) of 2050 pF @ 25V. The maximum gate-source voltage (Vgs) is ±30V, and the threshold voltage (Vgs(th)) is 5.5V @ 2.5mA. This device is suitable for applications in power supply, motor control, and lighting industries. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 25 V |
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