IXFP8N85X
MOSFET N-CH 850V 8A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFP8N85X is an N-Channel HiPerFET™, Ultra X series Power MOSFET designed for high voltage applications. This component features a maximum drain-to-source voltage (Vdss) of 850V and a continuous drain current (Id) of 8A at 25°C. The device offers a low on-resistance (Rds On) of 850mOhm at 4A and 10V gate drive, with a maximum power dissipation of 200W at 25°C case temperature. Gate charge (Qg) is rated at a maximum of 17nC at 10V, and input capacitance (Ciss) is 654pF at 25V. The IXFP8N85X is packaged in a standard TO-220AB (IXFP) through-hole configuration, enabling efficient thermal management. This MOSFET is suitable for use in power supplies, motor control, and other high-voltage switching applications across various industrial sectors.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB (IXFP) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 850 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 654 pF @ 25 V |
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