IXFP8N50PM
MOSFET N-CH 500V 4.4A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFP8N50PM is a HiPerFET™, PolarHT™ series N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 4.4A at 25°C, with a maximum power dissipation of 42W (Tc). The IXFP8N50PM offers a low on-resistance (Rds On) of 800mOhm at 4A and 10V drive voltage, and a gate charge (Qg) of 20 nC at 10V. Its input capacitance (Ciss) is 1050 pF maximum at 25V. Packaged in a TO-220-3 through-hole configuration, this MOSFET operates across a wide temperature range of -55°C to 150°C (TJ). It is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM22-05PF
MOSFET 2N-CH 500V 13A I4-PAC
FMM22-06PF
MOSFET 2N-CH 600V 12A I4-PAC
IXFC16N50P
MOSFET N-CH 500V 10A ISOPLUS220
