IXFP8N50P3
MOSFET N-CH 500V 8A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFP8N50P3 is a HiPerFET™, Polar3™ series N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain current (Id) of 8A at 25°C, with a maximum power dissipation of 180W at the same temperature. The Rds(On) is specified at 800mOhm maximum for 4A and 10V Vgs. Key parameters include a gate charge (Qg) of 13 nC maximum at 10V and an input capacitance (Ciss) of 705 pF maximum at 25V. The IXFP8N50P3 is housed in a standard TO-220-3 package, making it suitable for power factor correction, switch mode power supplies, and industrial motor control applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.5mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 705 pF @ 25 V |
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