IXFP7N60P3
MOSFET N-CH 600V 7A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, Polar3™ N-Channel Power MOSFET, part number IXFP7N60P3. This device features a 600V drain-source voltage and a continuous drain current of 7A at 25°C. The Rds On is rated at a maximum of 1.15 Ohm at 500mA and 10V gate drive. With a gate charge of 13.3 nC at 10V and input capacitance of 705 pF at 25V, this MOSFET is designed for efficient switching. It offers a maximum power dissipation of 180W and operates within a temperature range of -55°C to 150°C. The TO-220-3 package with through-hole mounting is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 705 pF @ 25 V |
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