IXFP7N100P
MOSFET N-CH 1000V 7A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFP7N100P is an N-Channel Power MOSFET designed for high-voltage applications. This HiPerFET™, Polar series device features a Drain-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 7 A (Tc) at 25°C. With a maximum Power Dissipation of 300 W (Tc), it offers robust performance. The Rds On is specified at 1.9 Ohm maximum at 3.5 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 47 nC at 10 V and an Input Capacitance (Ciss) of 2590 pF at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ) and is presented in a standard TO-220-3 through-hole package, suitable for applications in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2590 pF @ 25 V |
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