IXFP6N120P
MOSFET N-CH 1200V 6A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFP6N120P is an N-Channel HiPerFET™ Polar MOSFET designed for high-voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous Drain Current (Id) of 6A at 25°C. Key electrical characteristics include a maximum on-resistance (Rds On) of 2.4 Ohms at 500mA and 10V, and a gate charge (Qg) of 92 nC at 10V. With a maximum power dissipation of 250W at 25°C, this MOSFET is suitable for demanding power conversion tasks. It features a standard TO-220-3 package for through-hole mounting, ensuring robust mechanical and thermal performance. The operating temperature range is from -55°C to 150°C. This device is commonly utilized in power supplies, motor control, and industrial power applications.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2830 pF @ 25 V |
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