IXFP5N50PM
MOSFET N-CH 500V 3.2A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFP5N50PM is a HiPerFET™, PolarHT™ series N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 3.2 A at 25°C (Tc). The IXFP5N50PM offers a maximum on-resistance (Rds On) of 1.4 Ohms at 2.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 12.6 nC and input capacitance (Ciss) of 620 pF, both specified at 10 V and 25 V respectively. With a maximum power dissipation of 38 W (Tc), this device is packaged in a TO-220-3 through-hole configuration, suitable for operation across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in industries such as power supply design, motor control, and lighting.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 500µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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