IXFP5N100P
MOSFET N-CH 1000V 5A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™, Polar series IXFP5N100P is an N-Channel Power MOSFET designed for high voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous Drain current (Id) of 5 A at 25°C (Tc). With a maximum power dissipation of 250 W (Tc), it is suitable for demanding power conversion and switching applications. The IXFP5N100P exhibits a maximum Rds On of 2.8 Ohms at 500 mA and 10 V gate drive. Key parameters include a gate charge (Qg) of 33.4 nC and input capacitance (Ciss) of 1830 pF at 25 V. Packaged in a standard TO-220-3 through-hole configuration, this MOSFET operates within a temperature range of -55°C to 150°C (TJ). Its robust design makes it a critical component in power supplies, industrial motor control, and alternative energy systems.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1830 pF @ 25 V |
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