IXFP4N60P3
MOSFET N-CH 600V 4A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, Polar3™ N-Channel Power MOSFET, part number IXFP4N60P3, offers a 600V drain-source breakdown voltage and a continuous drain current rating of 4A at 25°C (Tc). This through-hole device features a low on-resistance of 2.2 Ohms maximum at 2A and 10V Vgs, coupled with a typical gate charge of 6.9 nC. The TO-220-3 package supports a maximum power dissipation of 114W (Tc) and operates across an extended temperature range of -55°C to 150°C. Key parameters include a 365 pF maximum input capacitance (Ciss) at 25V. This component is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V |
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