IXFP4N100Q
MOSFET N-CH 1000V 4A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXFP4N100Q is a HiPerFET™, Q Class N-Channel Power MOSFET designed for high voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 1000V and a continuous Drain Current (Id) of 4A at 25°C (Tc), this component offers a maximum power dissipation of 150W (Tc). The device exhibits a low on-resistance (Rds On) of 3Ohm maximum at 2A and 10V gate drive. Key parameters include a gate charge (Qg) of 39 nC maximum at 10V and input capacitance (Ciss) of 1050 pF maximum at 25V. The IXFP4N100Q is housed in a TO-220-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply, industrial, and high-voltage switching applications.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.5mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
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