IXFP3N80
MOSFET N-CH 800V 3.6A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFP3N80 is an N-Channel Power MOSFET with a 800V drain-source breakdown voltage. This device features a continuous drain current capability of 3.6A at 25°C (Tc). The IXFP3N80 offers a low on-resistance of 3.6 Ohms maximum at 500mA and 10V gate-source voltage. With a maximum power dissipation of 100W (Tc) and a junction-to-case thermal resistance, it is suitable for high-voltage switching applications. The gate charge is specified at 24 nC maximum at 10V, and input capacitance is 685 pF maximum at 25V. Packaged in a TO-220-3 through-hole configuration, this MOSFET operates within a temperature range of -55°C to 150°C. The IXFP3N80 is utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 685 pF @ 25 V |
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