IXFP3N50PM
MOSFET N-CH 500V 2.7A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFP3N50PM is a 500V N-Channel power MOSFET from the HiPerFET™, PolarHT™ series. This through-hole component, housed in a TO-220-3 package, offers a continuous drain current of 2.7A at 25°C and a maximum power dissipation of 36W (Tc). Key electrical characteristics include a Vgs(th) of 5.5V (max) at 250µA and a low Rds On of 2 Ohm (max) at 1.8A, 10V. The gate charge (Qg) is rated at 9.3 nC (max) at 10V, with input capacitance (Ciss) at 409 pF (max) at 25V. This device is suitable for applications requiring high voltage and efficient switching, commonly found in power supplies, motor control, and lighting systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HiPerFET™, PolarHT™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 409 pF @ 25 V |
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